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We found that temperature-dependent infrared spectroscopy measurements (i.e., reflectance or transmittance) using a Fourier-transform spectrometer can have substantial errors, especially for elevated sample temperatures and collection using an objective lens. These errors can arise as a result of partial detector saturation due to thermal emission from the measured sample reaching the detector, resulting in nonphysical apparent reduction of reflectance or transmittance with increasing sample temperature. Here, we demonstrate that these temperature-dependent errors can be corrected by implementing several levels of optical attenuation that enable convergence testing of the measured reflectance or transmittance as the thermal-emission signal is reduced, or by applying correction factors that can be inferred by looking at the spectral regions where the sample is not expected to have a substantial temperature dependence.

 

Abstract Optical bottle beams can be used to trap atoms and small low-index particles. We introduce a figure of merit (FoM) for optical bottle beams, specifically in the context of optical traps, and use it to compare optical bottle-beam traps obtained by three different methods. Using this FoM and an optimization algorithm, we identified the optical bottle-beam traps based on a Gaussian beam illuminating a metasurface that are superior in terms of power efficiency than existing approaches. We numerically demonstrate a silicon metasurface for creating an optical bottle-beam trap. 

Low-dimensional materials with chain-like (one-dimensional) or layered (two-dimensional) structures are of significant interest due to their anisotropic electrical, optical, and thermal properties. One material with a chain-like structure, BaTiS3 (BTS), was recently shown to possess giant in-plane optical anisotropy and glass-like thermal conductivity. To understand the origin of these effects, it is necessary to fully characterize the optical, thermal, and electronic anisotropy of BTS. To this end, BTS crystals with different orientations (a- and c-axis orientations) were grown by chemical vapor transport. X-ray absorption spectroscopy was used to characterize the local structure and electronic anisotropy of BTS. Fourier transform infrared reflection/transmission spectra show a large in-plane optical anisotropy in the a-oriented crystals, while the c-axis oriented crystals were nearly isotropic in-plane. BTS platelet crystals are promising uniaxial materials for infrared optics with their optic axis parallel to the c-axis. The thermal conductivity measurements revealed a thermal anisotropy of ∼4.5 between the c- and a-axis. Time-domain Brillouin scattering showed that the longitudinal sound speed along the two axes is nearly the same, suggesting that the thermal anisotropy is a result of different phonon scattering rates. 

Heavy and hyper doping of ZnO by a combination of gallium (Ga) ion implantation using a focused ion beam (FIB) system and post‐implantation laser annealing is demonstrated. Ion implantation allows for the incorporation of impurities with nearly arbitrary concentrations, and the laser‐annealing process enables dopant activation close to or beyond the solid‐solubility limit of Ga in ZnO. Heavily doped ZnO:Ga with free‐carrier concentrations of ≈10²¹ cm⁻³, resulting in a plasma wavelength of 1.02 μm, which is substantially shorter than the telecommunication wavelength of 1.55 μm is demonstrated. Thus, this approach enables the control of the plasma frequency of ZnO from the far infrared down to 1.02 μm, thus, providing a promising plasmonic material for applications in this regime.

 

Thermal emission is the radiation of electromagnetic waves from hot objects. The promise of thermal‐emission engineering for applications in energy harvesting, radiative cooling, and thermal camouflage has recently led to renewed research interest in this topic. However, accurate and precise measurements of thermal emission in a laboratory setting can be challenging in part due to the presence of background emission from the surrounding environment and the measurement instrument itself. This problem is especially acute for thermal emitters that have unconventional temperature dependence, operate at low temperatures, or are out of equilibrium. In this paper, general procedures are described, recommended, and demonstrated for thermal‐emission measurements that can accommodate such unconventional thermal emitters.